100 V N-Channel TrenchFET® Power MOSFETs With Industry-Low On-Resistance Down to 83 mΩ
Vishay’s new SiB456DK and SiA416DJ TrenchFET® power MOSFETs featuring ThunderFET® technology are the industry’s first 100 V n-channel devices in the compact, thermally enhanced PowerPAK® SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 mΩ and 100 mΩ, respectively. (For hi-res version, select "View all sizes" from Actions pulldown menu above.)
100 V N-Channel TrenchFET® Power MOSFETs With Industry-Low On-Resistance Down to 83 mΩ
Vishay’s new SiB456DK and SiA416DJ TrenchFET® power MOSFETs featuring ThunderFET® technology are the industry’s first 100 V n-channel devices in the compact, thermally enhanced PowerPAK® SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 mΩ and 100 mΩ, respectively. (For hi-res version, select "View all sizes" from Actions pulldown menu above.)